UnitedSiC / Qorvo 750V UJ4C/SC SiC FETs in D2PAK-7L Package are available in multiple on-resistance options from 9mΩ to 60mΩ. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class R_DS x Area Figure of Merit, resulting in the lowest conduction losses in a small die. The D2PAK-7L package provides reduced inductance from compact internal connection loops, which, along with the included Kelvin source connection, results in low switching loss, enabling higher frequency operation and improved system power density. Five parallel gull-wing source connections allow low inductance and high current usage. The silver-sinter die-attach results in very low thermal resistance for maximum heat extraction on standard PCBs and IMS substrates with liquid cooling. These SiC FETs offer a low body diode, ultra-low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. The standard gate-drive characteristics of the FETs make them ideal replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices.